Enhanced Contact Performance and Thermal Tolerance of Ni/Bi2Te3 Joints for Bi2Te3-Based Thermoelectric Devices | ACS Applied Materials & Interfaces
a–c Properties of ohmic contacts with n-type 4H-SiC. a Ni, b Ni/Ti/Ni,... | Download Scientific Diagram
Investigation of the Mechanism for Ohmic Contact Formation in Ti/Al/Ni/Au Contacts to β-Ga2O3 Nanobelt Field-Effect Transistors | ACS Applied Materials & Interfaces
Improved reduction of contact resistance in NiSi/Si junction using Holmium interlayer - ScienceDirect
Study on simultaneous formation of ohmic contacts on p- and n- type 4H-SiC using Ni/Ti/Al ternary system | Semantic Scholar
Electrical properties of graphene-metal contacts | Scientific Reports
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What is meant by close contact? - Guidance - COVID-19 (Coronavirus) Northern Ireland
![PDF] Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/053d815d01e67f38ebbcbf513442ec8e0b3b7ccd/3-Figure1-1.png "PDF] Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN | Semantic Scholar")
PDF] Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN | Semantic Scholar
I – V curves of Ni contacts on p-GaN samples under various conditions. | Download Scientific Diagram
Improved surface morphology of a Ti/Al/Ni/Au ohmic contact for AlGaN/GaN heterostructure by Al2O3 particles | Semantic Scholar
Micromachines | Free Full-Text | Comprehensive Schottky Barrier Height Behavior and Reliability Instability with Ni/Au and Pt/Ti/Pt/Au on AlGaN/GaN High-Electron-Mobility Transistors
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Specific contact resistance (a) and effective barrier height (b) of Ni... | Download Scientific Diagram
Current-voltage (I-V) characteristics of Ni/Pt/Au contacts on p-GaN... | Download Scientific Diagram
Development of Ni/Al and Ni/Ti/Al ohmic contact materials for p-type 4H-SiC - ScienceDirect
Selective Laser Annealing for Ohmic Contact Formation (OCF) - Laser Micromachining - 3D-Micromac AG
Solved b) A cell is set up such that a Ni wire is placed in | Chegg.com
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Importance of layer distribution in Ni and Au based ohmic contacts to p-type GaN - ScienceDirect
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